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1/15 automotive specific february 2002 stp100nf04 STB100NF04, STB100NF04-1 n-channel 40v - 0.0043 w - 120a to-220/d 2 pak/i 2 pak stripfet? ii power mosfet n typical r ds (on) = 0.0043 w n standard threshold drive n 100% avalanche tested description this power mosfet is the latest development of st- microelectronics unique single feature size ? strip-based process. the resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man- ufacturing reproducibility. applications n high current, high switching speed n motor control, audio amplifiers n dc-dc & dc-ac converters n solenoid and relay drivers ordering information type v dss r ds(on) i d pw stp100nf04 STB100NF04 STB100NF04-1 40 v 40 v 40 v < 0.0046 w < 0.0046 w <0.0046 w 120 a 120 a 120 a 300 w 300 w 300 w sales type marking package packaging stp100nf04 p100nf04 to-220 tube STB100NF04t4 b100nf04 d 2 pa k tape & reel STB100NF04-1 b100nf04 i 2 pa k tube to-220 1 2 3 i 2 pak 1 3 d 2 pak internal schematic diagram 4 .com u datasheet
stp100nf04, STB100NF04, STB100NF04-1 2/15 absolute maximum ratings ( l ) pulse width limited by safe operating area (1) i sd 120a, di/dt 300a/s, v dd v (br)dss , t j t jmax. (2) starting t j = 25c, i d = 60a, v dd =30 v (#) current limited by package thermal data electrical characteristics (tcase =25c unless otherwise specified) on/off symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v dgr drain-gate voltage (r gs = 20 k w ) 40 v v gs gate- source voltage 20 v i d (#) drain current (continuos) at t c = 25c 120 a i d drain current (continuos) at t c = 100c 120 a i dm ( l ) drain current (pulsed) 480 a p tot total dissipation at t c = 25c 300 w derating factor 2 w/c dv/dt (1) peak diode recovery voltage slope 6 v/ns e as (2) single pulse avalanche energy 1.2 j t j t stg operating junction temperature storage temperature -55 to 175 c to-220 / i 2 pak / d 2 pak rthj-case thermal resistance junction-case max 0.5 c/w rthj-pcb thermal resistance junction-pcb max see curve on page 6 c/w rthj-amb thermal resistance junction-ambient (free air) max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 50 a 0.0043 0.0046 w 4 .com u datasheet
3/15 stp100nf04, STB100NF04, STB100NF04-1 electrical characteristics (continued) dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 50 a 150 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 5100 1300 160 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v, i d = 60 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 35 220 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 32v, i d = 120 a, v gs = 10v (see, figure 4) 110 35 35 150 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 20 v, i d = 60 a r g =4.7 w v gs = 10 v (resistive load see, figure 3) 80 50 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 120 480 a a v sd (1) forward on voltage i sd = 120 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a, di/dt = 100a/s v dd = 20v, t j = 150c (see test circuit, figure 5) 75 185 5 ns nc a 4 .com u datasheet
stp100nf04, STB100NF04, STB100NF04-1 4/15 max id current vs tc power derating vs tc transconductance transfer characteristics static drain-source on resistance output characteristics 4 .com u datasheet
5/15 stp100nf04, STB100NF04, STB100NF04-1 gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized breakdown voltage vs temperature normalized gate thereshold voltage vs temp. source-drain diode forward characteristics 4 .com u datasheet
stp100nf04, STB100NF04, STB100NF04-1 6/15 thermal impedance thermal resistance rthj-a vs pcb copper area max power dissipation vs pcb copper area safe operating area 4 .com u datasheet
7/15 stp100nf04, STB100NF04, STB100NF04-1 allowable iav vs. time in avalanche the previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: p d(ave) = 0.5 * (1.3 * bv dss * i av ) e as(ar) = p d(ave) * t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche to derate above 25 c, at fixed i av, the following equation must be applied: i av = 2 * (t jmax - t case ) / (1.3 * bv dss * z th ) where: z th = k * r th is the value coming from normalized thermal response at fixed pulse width equal to t av . 4 .com u datasheet
stp100nf04, STB100NF04, STB100NF04-1 8/15 parameter node value ctherm1 5 - 4 0.011 ctherm2 4 - 3 0.0012 ctherm3 3 - 2 0.05 ctherm4 2 - 1 0.1 rtherm1 5 - 4 0.09 rtherm2 4 - 3 0.02 rtherm3 3 - 2 0.11 rtherm4 2 - 1 0.17 spice thermal model 4 .com u datasheet
9/15 stp100nf04, STB100NF04, STB100NF04-1 fig. 4.1: gate charge test waveform fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load fig. 3.1: inductive load switching and diode re- covery times waveform 4 .com u datasheet
stp100nf04, STB100NF04, STB100NF04-1 10/15 fig. 5.1: diode recovery times waveform fig. 5: test circuit for diode recovery times 4 .com u datasheet
11/15 stp100nf04, STB100NF04, STB100NF04-1 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c 4 .com u datasheet
stp100nf04, STB100NF04, STB100NF04-1 12/15 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o d 2 pak mechanical data 3 4 .com u datasheet
13/15 stp100nf04, STB100NF04, STB100NF04-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data 4 .com u datasheet
stp100nf04, STB100NF04, STB100NF04-1 14/15 tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data 4 .com u datasheet
15/15 stp100nf04, STB100NF04, STB100NF04-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com 4 .com u datasheet

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